2SD1609, 2sd1610 silicon npn epitaxial application low frequency high voltage amplifier complementary pair with 2sb1109 and 2sb1110 outline to-126 mod 1. emitter
2. collector
3. base 1 2 3 32 k w
(typ) 0.4 k w
(typ) i d 3 2 1 absolute maximum ratings (ta = 25c) ratings item symbol 2SD1609 2sd1610 unit collector to base voltage v cbo 160 200 v collector to emitter voltage v ceo 160 200 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 1.25 1.25 w junction temperature tj 150 150 c storage temperature tstg C45 to +150 C45 to +150 c
2SD1609, 2sd1610 2 electrical characteristics (ta = 25c) 2SD1609 2sd1610 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 160 200 v i c = 10 a, i e = 0 collector to emitter breakdown voltage v (br)ceo 160 200 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 55 vi e = 10 a, i c = 0 collector cutoff current i cbo 10 av cb = 140 v, i e = 0 10 v ce = 160 v, i e = 0 dc current tarnsfer ratio h fe1 * 1 60 320 60 320 v ce = 5 v, i c = 10 ma h fe2 30 30 v ce = 5 v, i c = 1 ma base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 2 2 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 10 ma collector output capacitance cob 3.8 3.8 pf v cb = 10 v, i e = 0, f = 1 mhz note: 1. the 2SD1609 and 2sd1610 are grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320
2SD1609, 2sd1610 3 maximum collector dissipation
curve 1.5 1.0 0.5 0 50 100 150 ambient temperature ta ( c) collector power dissipation p c (w) typical output characteristics 20 16 12 8 4 024 collector to emitter voltage v ce (v) 10 8 6 collector current i c (ma) i b = 0 10 m a 20 30 40 60 70 80 90 100 110 120 50 100 50 20 10 5 2 1 0 0.2 collector current i c (ma) 0.4 base to emitter voltage v be (v) 0.6 1.0 0.8 typical transfer characteristics v ce = 5 v ta = 75 c ?5 25 500 200 100 50 20 10 5 1 2 20 100 10 50 dc current transfer ratio h fe 5 collector current i c (ma) v ce = 5 v
pulse dc current transfer ratio vs.
collector current ta = 75 c 25 ?5
2SD1609, 2sd1610 4 saturation voltage vs. collector current i c = 10 i b
pulse 5 2 1.0 0.5 0.2 0.1 0.05 collector to emitter saturation voltage v ce(sat) (v)
base to emitter saturation voltage v be(sat) (v) 12 10 collector current i c (ma) 550 20 100 v be(sat) v ce(sat) ta = ?5 c ta = ?5 c 25 75 75 25 gain bandwidth product vs.
collector current 500 200 100 50 20 10 5 1.0 0.5 2 collector current i c (ma) 20 10 50 5 gain bandwidth product f t (mhz) v ce = 10 v 50 20 10 5 2 1.0 0.5 1 collector output capacitance c ob (pf) 2510 collector to base voltage v cb (v) 20 100 50 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0
2SD1609, 2sd1610 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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